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Design of a 4.2–5.4 GHz differential LC VCO using 0.35 μm SiGe BiCMOS technology for IEEE 802.11a applications
Author(s) -
Esame Onur,
Tekin Ibrahim,
Bozkurt Ayhan,
Gurbuz Yasar
Publication year - 2007
Publication title -
international journal of rf and microwave computer‐aided engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.335
H-Index - 39
eISSN - 1099-047X
pISSN - 1096-4290
DOI - 10.1002/mmce.20218
Subject(s) - voltage controlled oscillator , phase noise , dbc , bicmos , electrical engineering , heterojunction bipolar transistor , rfic , bipolar junction transistor , microwave , materials science , transistor , voltage , electronic engineering , optoelectronics , engineering , radio frequency , telecommunications
In this paper, a 4.2–5.4 GHz, −Gm LC voltage controlled oscillator (VCO) for IEEE 802.11a standard is presented. The circuit is designed with AMS 0.35 μm SiGe BiCMOS process that includes high‐speed SiGe Heterojunction Bipolar Transistors (HBTs). According to post‐layout simulation results, phase noise is −110.7 dBc/Hz at 1 MHz offset from 5.4 GHz carrier frequency and −113.4 dBc/Hz from 4.2 GHz carrier frequency. A linear, 1200 MHz tuning range is obtained from the simulations, utilizing accumulation‐mode varactors. Phase noise was also found to be relatively low because of taking advantage of differential tuning concept. Output power of the fundamental frequency changes between 4.8 dBm and 5.5 dBm depending on the tuning voltage. Based on the simulation results, the circuit draws 2 mA without buffers and 14.5 mA from 2.5 V supply including buffer circuits leading to a total power dissipation of 36.25 mW. The circuit layout occupies an area of 0.6 mm 2 on Si substrate, including DC and RF pads. © 2007 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2007.