Analysis and design of a fully integrated CMOS low‐noise amplifier for concurrent dual‐band receivers

This article thoroughly analyzes a concurrent dual‐band low‐noise amplifier (LNA) and carefully examines the effects of both active and passive elements on the performance of the dual‐band LNA. As an example of the analysis, a fully integrated dual‐band LNA is designed in a standard 0.18‐μm 6M1P CMOS technology from the system viewpoint for the first time to provide a higher gain at the high band in order to compensate the high‐band signal's extra loss over the air transmission. The LNA drains 6.21 mA of current from a 1.5‐V supply voltage and achieves voltage gains of 14 and 22 dB, input S 11 of 15 and 18 dB, and noise figures of 2.45 and 2.51 dB at 2.4 and 5.2 GHz, respectively. © 2006 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2006.