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Large‐signal model for microwave FETs under CW laser stimulation
Author(s) -
Zamanillo J. M.,
Navarro C.,
PérezVega C.,
Mediavilla A.
Publication year - 2006
Publication title -
international journal of rf and microwave computer‐aided engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.335
H-Index - 39
eISSN - 1099-047X
pISSN - 1096-4290
DOI - 10.1002/mmce.20134
Subject(s) - intermodulation , high electron mobility transistor , microwave , materials science , signal (programming language) , optoelectronics , scattering parameters , mesfet , large signal model , power (physics) , laser , equivalent circuit , electronic engineering , transistor , optics , physics , electrical engineering , computer science , engineering , telecommunications , field effect transistor , amplifier , cmos , quantum mechanics , voltage , programming language
This article presents the results of research on the large‐signal dynamic behavior (pulsed I/V curves) of PHEMT devices, in the overall I/V plane, when the incident optical‐input‐power level is changed. A complete bias and the optical‐power dependency of the parameters used in the large‐signal model for a PHEMT device are determined from the experimental scattering parameters and the DC and pulsed measurements. All the derivatives of the model shown here are continuous in order to provide a realistic description of the circuit distortion and intermodulation phenomena. The model is also valid for GaAs MESFETs. The results obtained for the model exhibit very good agreement with the measurements. © 2005 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2006.