Large‐signal model for microwave FETs under CW laser stimulation | Zendy

Zamanillo J. M. | Zendy; Navarro C. | Zendy; PérezVega C. | Zendy; Mediavilla A. | Zendy

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Large‐signal model for microwave FETs under CW laser stimulation

Author(s) -

Zamanillo J. M.,

Navarro C.,

PérezVega C.,

Mediavilla A.

Publication year - 2006

Publication title -

international journal of rf and microwave computer‐aided engineering

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.335

H-Index - 39

eISSN - 1099-047X

pISSN - 1096-4290

DOI - 10.1002/mmce.20134

Subject(s) - intermodulation , high electron mobility transistor , microwave , materials science , signal (programming language) , optoelectronics , scattering parameters , mesfet , large signal model , power (physics) , laser , equivalent circuit , electronic engineering , transistor , optics , physics , electrical engineering , computer science , engineering , telecommunications , field effect transistor , amplifier , cmos , quantum mechanics , voltage , programming language

This article presents the results of research on the large‐signal dynamic behavior (pulsed I/V curves) of PHEMT devices, in the overall I/V plane, when the incident optical‐input‐power level is changed. A complete bias and the optical‐power dependency of the parameters used in the large‐signal model for a PHEMT device are determined from the experimental scattering parameters and the DC and pulsed measurements. All the derivatives of the model shown here are continuous in order to provide a realistic description of the circuit distortion and intermodulation phenomena. The model is also valid for GaAs MESFETs. The results obtained for the model exhibit very good agreement with the measurements. © 2005 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2006.

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