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Nonlinear RF device modelling in the presence of low‐frequency dispersive phenomena
Author(s) -
Filicori F.,
Santarelli A.,
Traverso P. A.,
Raffo A.,
Vannini G.,
Pagani M.
Publication year - 2006
Publication title -
international journal of rf and microwave computer‐aided engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.335
H-Index - 39
eISSN - 1099-047X
pISSN - 1096-4290
DOI - 10.1002/mmce.20133
Subject(s) - nonlinear system , microwave , high electron mobility transistor , radio frequency , electronic engineering , computer science , dispersion (optics) , signal (programming language) , computational physics , physics , electrical engineering , engineering , telecommunications , optics , transistor , voltage , quantum mechanics , programming language
Abstract Theoretical and practical issues concerning the nonlinear dynamic modelling of electron devices are discussed in this article. All the different dynamic phenomena, which are important for the description of the device behaviour, are comprehensively dealt with by means of a unified mathematical derivation. In particular, both the “fast” dynamics associated with charge‐storage phenomena at high operating frequencies and the “slow” dynamics of low‐frequency dispersion, due to device self‐heating and “charge‐trapping” effects in deep‐bulk and surface regions, are simultaneously taken into account. The result is an empirical, technology‐independent and nonquasi‐static model of electron devices, suitable for a simple and reliable identification procedure and based on conventional measurements of static characteristics and bias‐ and frequency‐ dependent small‐signal parameters. The model implementation in the framework of commercially available CAD tools is also outlined in this article. Experimental validation, based on a GaAs p‐HEMT, is also presented. © 2005 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2006.