Premium
High efficiency and high linearity power amplifier design
Author(s) -
Colantonio Paolo,
García José Angel,
Giannini Franco,
Gómez Carmen,
Carvalho Nuno Borges,
Limiti Ernesto,
Pedro José Carlos
Publication year - 2005
Publication title -
international journal of rf and microwave computer‐aided engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.335
H-Index - 39
eISSN - 1099-047X
pISSN - 1096-4290
DOI - 10.1002/mmce.20111
Subject(s) - intermodulation , amplifier , linearity , distortion (music) , rf power amplifier , harmonic , power (physics) , total harmonic distortion , electronic engineering , biasing , microwave , electrical engineering , engineering , computer science , voltage , physics , telecommunications , acoustics , cmos , quantum mechanics
Abstract The optimum high‐frequency Class‐F loading conditions are inferred, accounting for the effects of actual output device behavior, and deriving useful charts for an effective design. The important role of the biasing point selection is stressed, demonstrating that it must be different from the Class‐B theoretical one to get the expected improvement. The IMD behavior of the Class‐F amplifier is presented and the large‐signal sweet‐spot origin in the IMD output characteristics is discussed, together with possible strategies to improve intermodulation distortion performances. The control of the sweet spot position is demonstrated via proper terminating impedances, both at fundamental and harmonic frequencies and low frequencies. © 2005 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2005.