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A 3‐V variable‐gain amplifier in Si/SiGe BiCMOS technology for 5‐GHz WLAN applications
Author(s) -
Alimenti F.,
Palazzari V.,
Roselli L.,
Scorzoni A.
Publication year - 2005
Publication title -
international journal of rf and microwave computer‐aided engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.335
H-Index - 39
eISSN - 1099-047X
pISSN - 1096-4290
DOI - 10.1002/mmce.20110
Subject(s) - cascode , variable gain amplifier , amplifier , electronic engineering , bicmos , electrical engineering , microwave , engineering , computer science , transistor , telecommunications , cmos , operational amplifier , voltage
A variable‐gain class‐A amplifier for 5‐GHz wireless local area networks (WLAN) applications is developed using commercial 0.35‐μm Si/SiGe BiCMOS technology. The amplifier is based on a cascode differential pair and is fully integrated with input and output matching networks. The design starts with application of the Cripps' method and it is further refined by nonlinear harmonic‐balance simulations. These simulations are in good agreement with the measurements carried out at wafer level on a realized prototype. © 2005 Wiley Periodicals, Inc. Int J RF and Microwave CAE 15, 2005.