Premium
Accurate modeling of electron device I/V characteristics through a simplified large‐signal measurement setup
Author(s) -
Raffo A.,
Santarelli A.,
Traverso P. A.,
Pagani M.,
Vannini G.,
Filicori F.
Publication year - 2005
Publication title -
international journal of rf and microwave computer‐aided engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.335
H-Index - 39
eISSN - 1099-047X
pISSN - 1096-4290
DOI - 10.1002/mmce.20109
Subject(s) - intermodulation , signal (programming language) , microwave , characterization (materials science) , high electron mobility transistor , network analyzer (electrical) , distortion (music) , electronic engineering , instrumentation (computer programming) , radio frequency , frequency band , computer science , materials science , acoustics , physics , electrical engineering , engineering , optics , telecommunications , amplifier , bandwidth (computing) , transistor , programming language , voltage , operating system
Low‐frequency dispersive phenomena due to self‐heating and/or “traps” (that is, surface‐state densities and deep‐level traps) cause important dynamic deviations in the I/V characteristics of III‐V devices and they must be taken into account when an accurate large‐signal dynamic model is needed. To this end, different low‐frequency dispersive I/V models have been proposed by the research community and, quite often, a characterization based on pulsed I/V measurement systems has been suggested as the most appropriate for the identification of model parameters. Unfortunately, besides requiring special‐purpose setups, pulsed characterization may suffer from some drawbacks, as discussed in this article. As an alternative, a simple large‐signal measurement setup is presented here, which is based on low‐frequency sinusoidal excitations and can be easily implemented by means of conventional general‐purpose laboratory instrumentation. The proposed setup is successfully adopted in this article to identify the dispersive I/V characteristics of a GaAs PHEMT large‐signal model providing excellent prediction of intermodulation distortion at Ka‐band frequencies. © 2005 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2005.