Premium
Enabling a compact model to simulate the RF behavior of MOSFETs in SPICE
Author(s) -
TorresTorres Reydezel,
MurphyArteaga Roberto
Publication year - 2005
Publication title -
international journal of rf and microwave computer‐aided engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.335
H-Index - 39
eISSN - 1099-047X
pISSN - 1096-4290
DOI - 10.1002/mmce.20080
Subject(s) - spice , electronic engineering , mosfet , transistor model , microwave , electronic circuit simulation , radio frequency , equivalent circuit , computer science , engineering , electrical engineering , electronic circuit , transistor , telecommunications , voltage
A detailed methodology for implementing a MOSFET model valid to perform RF simulations is described in this article. Since the SPICE‐like simulation programs are used as a standard tool for integrated circuit (IC) design, the resulting model is oriented for its application under the SPICE environment. The core of the proposed model is the popular BSIM3v3, but in this model the RF effects are taken into account by means of extrinsic lumped elements. Good agreement between the simulated and measured small‐signal S ‐parameter data is achieved for a 0.18‐μm channel‐length MOSFET, thus validating the proposed model. © 2005 Wiley Periodicals, Inc. Int J RF and Microwave CAE 15, 2005.