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Effects of low‐frequency drain termination and injection on nonlinear amplifier performances
Author(s) -
Duvanaud C.,
Robin F.,
Dardenne S.,
Huin F.,
Dascalescu L.
Publication year - 2005
Publication title -
international journal of rf and microwave computer‐aided engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.335
H-Index - 39
eISSN - 1099-047X
pISSN - 1096-4290
DOI - 10.1002/mmce.20074
Subject(s) - amplifier , low frequency , nonlinear system , microwave , signal (programming language) , radio frequency , envelope (radar) , electrical engineering , power (physics) , rf power amplifier , materials science , voltage , electronic engineering , acoustics , physics , engineering , computer science , telecommunications , cmos , radar , quantum mechanics , programming language
Low‐frequency parameters have important effects on the nonlinear performances of power amplifiers. Injection at the output of a low‐frequency‐voltage device, following the signal envelope, is proposed. Two‐tone simulations, measurements using the principle of a low‐frequency active load‐pull system, and implementation of the technique are presented. © 2005 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2005.