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Constitutive relations for nonlinear modeling of Si/SiGe HBTs using an ANN model
Author(s) -
Taher H.,
Schreurs D.,
Nauwelaers B.
Publication year - 2005
Publication title -
international journal of rf and microwave computer‐aided engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.335
H-Index - 39
eISSN - 1099-047X
pISSN - 1096-4290
DOI - 10.1002/mmce.20069
Subject(s) - harmonics , bipolar junction transistor , nonlinear system , artificial neural network , materials science , microwave , electronic engineering , nonlinear model , optoelectronics , transistor , electrical engineering , computer science , engineering , physics , telecommunications , artificial intelligence , voltage , quantum mechanics
In this article, we demonstrate how the constitutive relations for the nonlinear modeling of hetro‐junction bipolar transistors (HBTs) can be based on an artificial neural network (ANN) model representation.. The model is implemented using a commercial microwave simulator, and has been validated by DC and nonlinear measurements. Excellent agreement is obtained as compared with the results of the DC measurements, and the model predicts well the higher‐order harmonics in a single tone test.. © 2005 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2005.