A time‐ and frequency‐domain characterization of a thin‐film metamorphic HEMT under modulated backside illumination | Zendy

Vandersmissen R. | Zendy; Schreurs D. | Zendy; Vandenberghe S. | Zendy; Borghs G. | Zendy

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A time‐ and frequency‐domain characterization of a thin‐film metamorphic HEMT under modulated backside illumination

Author(s) -

Vandersmissen R.,

Schreurs D.,

Vandenberghe S.,

Borghs G.

Publication year - 2004

Publication title -

international journal of rf and microwave computer‐aided engineering

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.335

H-Index - 39

eISSN - 1099-047X

pISSN - 1096-4290

DOI - 10.1002/mmce.20042

Subject(s) - high electron mobility transistor , microwave , materials science , optoelectronics , characterization (materials science) , radio frequency , spectrum analyzer , signal (programming language) , laser , network analyzer (electrical) , optics , electrical engineering , computer science , engineering , transistor , nanotechnology , physics , voltage , telecommunications , programming language

This article shows how the opto‐electrical interaction of a microwave device, that is, a metamorphic HEMT, can be characterized by combining a large‐signal network analyzer setup with a modulated laser (1550‐nm) module. Furthermore, an optically tunable oscillator has been realized in multilayer thin‐film technology. © 2004 Wiley Periodicals, Inc. Int J RF and Microwave CAE 14: 535–542, 2004.

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