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A time‐ and frequency‐domain characterization of a thin‐film metamorphic HEMT under modulated backside illumination
Author(s) -
Vandersmissen R.,
Schreurs D.,
Vandenberghe S.,
Borghs G.
Publication year - 2004
Publication title -
international journal of rf and microwave computer‐aided engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.335
H-Index - 39
eISSN - 1099-047X
pISSN - 1096-4290
DOI - 10.1002/mmce.20042
Subject(s) - high electron mobility transistor , microwave , materials science , optoelectronics , characterization (materials science) , radio frequency , spectrum analyzer , signal (programming language) , laser , network analyzer (electrical) , optics , electrical engineering , computer science , engineering , transistor , nanotechnology , physics , voltage , telecommunications , programming language
This article shows how the opto‐electrical interaction of a microwave device, that is, a metamorphic HEMT, can be characterized by combining a large‐signal network analyzer setup with a modulated laser (1550‐nm) module. Furthermore, an optically tunable oscillator has been realized in multilayer thin‐film technology. © 2004 Wiley Periodicals, Inc. Int J RF and Microwave CAE 14: 535–542, 2004.