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A 4–18‐GHz reconfigurable RF MEMS matching network for power amplifier applications
Author(s) -
VähäHeikkilä Tauno,
Rebeiz Gabriel M.
Publication year - 2004
Publication title -
international journal of rf and microwave computer‐aided engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.335
H-Index - 39
eISSN - 1099-047X
pISSN - 1096-4290
DOI - 10.1002/mmce.20021
Subject(s) - tuner , amplifier , impedance matching , standing wave ratio , wideband , electronic engineering , stub (electronics) , electrical engineering , capacitor , capacitance , rf power amplifier , electrical impedance , engineering , radio frequency , physics , antenna (radio) , voltage , cmos , microstrip antenna , electrode , quantum mechanics
We have developed a novel reconfigurable matching network based on the loaded‐line technique. The network is composed of N ‐switched capacitors ( N = 4–8) with a capacitance ratio of 4–5:1 and is suitable for power amplifiers at 4–18 GHz, or as an impedance tuner for noise parameter and load‐pull measurements at 10–28 GHz. The networks are very small, and offer better performance than double or triple stub matching networks. Extensive loss analysis indicates that the 8‐element network has a loss of 0.5 dB at 4–12 GHz, and less than 1.5 dB at 18 GHz, even when matching a 10Ω output impedance to a 50Ω load. As expected, the 4‐element matching network has about half the loss of the 8‐element network, but with much less impedance coverage. Both networks were simulated and measured in high VSWR conditions and can handle at least 500 mW of RF power at 4–18 GHz. The application areas are in phased array antennas, reconfigurable power amplifiers, and wideband noise‐parameter and load‐pull measurement systems. © 2004 Wiley Periodicals, Inc. Int J RF and Microwave CAE 14: 356–372, 2004.