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Single‐pole double‐throw switches using capacitive MEMS switches
Author(s) -
Malczewski Andrew,
Pillans Brandon
Publication year - 2004
Publication title -
international journal of rf and microwave computer‐aided engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.335
H-Index - 39
eISSN - 1099-047X
pISSN - 1096-4290
DOI - 10.1002/mmce.20019
Subject(s) - capacitive sensing , microelectromechanical systems , broadband , insertion loss , electrical engineering , microwave , engineering , shunt (medical) , return loss , electronic engineering , topology (electrical circuits) , telecommunications , physics , optoelectronics , medicine , antenna (radio) , cardiology
This article presents two MEMS‐based single‐pole double‐throw (SPDT) circuit designs using Raytheon's capacitive switch technology. One uses a series‐shunt topology for broadband operation covering 5–24 GHz with less than 1‐dB insertion loss and 25‐dB isolation. The second design employs resonant quarter‐wave sections to achieve loss below 1 dB across 24–31 GHz. © 2004 Wiley Periodicals, Inc. Int J RF and Microwave CAE 14: 383–387, 2004.