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Monolithic reconfigurable bandstop filter using RF MEMS switches
Author(s) -
Zheng Guizhen,
Papapolymerou John
Publication year - 2004
Publication title -
international journal of rf and microwave computer‐aided engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.335
H-Index - 39
eISSN - 1099-047X
pISSN - 1096-4290
DOI - 10.1002/mmce.20018
Subject(s) - stub (electronics) , insertion loss , materials science , band stop filter , microelectromechanical systems , capacitive sensing , microstrip , microwave , bandwidth (computing) , reactance , optoelectronics , band pass filter , radio frequency , passband , electrical engineering , filter (signal processing) , low pass filter , engineering , telecommunications , voltage
A monolithic, low‐power reconfigurable bandstop filter operating at 8, 10, 13, and 15 GHz that utilizes RF MEMS switches has been developed on high‐resisitivity silicon substrate. The filter is based on microstrip transmission lines with radial stubs that provide different reactance at different resonant frequencies. Selection of the desired stub reactance is achieved with cantilever capacitive RF MEMS switches that are electrostatically actuated. The tuning range of the fabricated filter is 7 GHz (8–15 GHz), which is about 60% of the mid‐band frequency. The rejection at the notch of the filter and the −10‐dB bandwidth range from −20 dB to −27 dB and 5% to 9.7%, respectively, at the different resonant frequencies The pass‐band insertion loss was found to be around 0.5 dB. © 2004 Wiley Periodicals, Inc. Int J RF and Microwave CAE 14: 373–382, 2004.