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Bias‐dependent small‐signal monolithic PIN diode modeling
Author(s) -
Rodenbeck Christopher T.,
Carroll James M.,
Flynt Robert A.,
Chang Kai
Publication year - 2001
Publication title -
international journal of rf and microwave computer‐aided engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.335
H-Index - 39
eISSN - 1099-047X
pISSN - 1096-4290
DOI - 10.1002/mmce.1047
Subject(s) - diode , pin diode , microwave , signal (programming language) , small signal model , biasing , step recovery diode , optoelectronics , materials science , electronic engineering , physics , computer science , electrical engineering , engineering , voltage , telecommunications , schottky diode , programming language
This paper details a new bias‐dependant small‐signal modeling methodology for monolithic PIN diodes. The frequency‐dependent responses of intrinsic p‐i‐n structures are de‐embedded from monolithic microwave integrated circuit PIN diodes of varying size and layout configuration and fit from 6 to 45 GHz to a classical linear model at each of 15 different bias levels. This methodology results in a bias‐dependent intrinsic diode data set that shows excellent agreement with large samples of small‐signal measurements. The models are useful for comparing trade‐offs in electrical performance among PIN diodes of varying size and layout style. © 2001 John Wiley & Sons, Inc. Int J RF and Microwave CAE 11: 396–403, 2001.