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Condition number for reliable microwave transistor modeling
Author(s) -
Choubani Fethi,
Béjaoui Wahid,
Bouallegue Ammar
Publication year - 2004
Publication title -
international journal of rf and microwave computer‐aided engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.335
H-Index - 39
eISSN - 1099-047X
pISSN - 1096-4290
DOI - 10.1002/mmce.10128
Subject(s) - mesfet , sensitivity (control systems) , microwave , electronic engineering , transistor , equivalent circuit , computer science , electrical engineering , engineering , field effect transistor , voltage , telecommunications
An appropriate procedure enabling the evaluation of the sensitivity of a MESFET small‐signal model given unavoidable measurement errors is presented in the first section of this article. This technique, which is based on calculation of the condition number, has been applied to an NE 76000 MESFET device. The results obtained enabled us to highlight the difficulties of an accurate MESFET characterization and to predict the equivalent‐circuit element errors. In the second part, we introduce a new approach that makes it possible to reduce the sensitivity of the parameters of the model. When applied to the same transistor, this approach enables us to reduce the sensitivity of the model of 30% on average. © 2004 Wiley Periodicals, Inc. Int J RF and Microwave CAE 14, 174–181, 2004.