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Comparison of the effectiveness of four linearizing techniques used in SiGe HBT LNA at 1900 MHz and low‐bias voltage
Author(s) -
TiradoMéndez José Alfredo,
IturbideSánchez Flavio,
Golovin Oleg,
JardónAguilar Hildeberto
Publication year - 2004
Publication title -
international journal of rf and microwave computer‐aided engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.335
H-Index - 39
eISSN - 1099-047X
pISSN - 1096-4290
DOI - 10.1002/mmce.10126
Subject(s) - heterojunction bipolar transistor , linearity , electrical engineering , microwave , dbm , voltage , common emitter , electronic engineering , materials science , optoelectronics , engineering , physics , amplifier , telecommunications , cmos , transistor , bipolar junction transistor
In this article, four linearizing techniques are compared with each other when they are used in a common‐emitter SiGe HBT LNA. Finally, when all of them are employed together, improved linearity of the LNA is observed and more than 10 dBm of IIP3 and −5 dBm of 1‐dB gain input compression point are realized when the circuit is fed with 2.4 V. © 2004 Wiley Periodicals, Inc. Int J RF and Microwave CAE 14, 144–152, 2004.