Comparison of the effectiveness of four linearizing techniques used in SiGe HBT LNA at 1900 MHz and low‐bias voltage | Zendy

TiradoMéndez José Alfredo | Zendy; IturbideSánchez Flavio | Zendy; Golovin Oleg | Zendy; JardónAguilar Hildeberto | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Premium

Comparison of the effectiveness of four linearizing techniques used in SiGe HBT LNA at 1900 MHz and low‐bias voltage

Author(s) -

TiradoMéndez José Alfredo,

IturbideSánchez Flavio,

Golovin Oleg,

JardónAguilar Hildeberto

Publication year - 2004

Publication title -

international journal of rf and microwave computer‐aided engineering

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.335

H-Index - 39

eISSN - 1099-047X

pISSN - 1096-4290

DOI - 10.1002/mmce.10126

Subject(s) - heterojunction bipolar transistor , linearity , electrical engineering , microwave , dbm , voltage , common emitter , electronic engineering , materials science , optoelectronics , engineering , physics , amplifier , telecommunications , cmos , transistor , bipolar junction transistor

In this article, four linearizing techniques are compared with each other when they are used in a common‐emitter SiGe HBT LNA. Finally, when all of them are employed together, improved linearity of the LNA is observed and more than 10 dBm of IIP3 and −5 dBm of 1‐dB gain input compression point are realized when the circuit is fed with 2.4 V. © 2004 Wiley Periodicals, Inc. Int J RF and Microwave CAE 14, 144–152, 2004.

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here

Accelerating Research