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Generalized nonlinear FET/HEMT modeling
Author(s) -
Johnson J.,
Branner G.R.,
Gudino D.,
Guan R.,
Badesha A.,
Chau W.,
Shams N.,
HajOmar A.
Publication year - 2004
Publication title -
international journal of rf and microwave computer‐aided engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.335
H-Index - 39
eISSN - 1099-047X
pISSN - 1096-4290
DOI - 10.1002/mmce.10124
Subject(s) - high electron mobility transistor , nonlinear system , electronic engineering , signal (programming language) , microwave , transistor model , transistor , large signal model , power (physics) , computer science , electrical engineering , engineering , physics , telecommunications , voltage , quantum mechanics , programming language
A modeling procedure which provides an accurate large‐signal response for variation in bias, input power level, and fundamental frequency for FET/HEMT transistors is designed. A procedure for measuring the large‐signal input response on an easily implemented system is presented. The technique is illustrated by designing a nonlinear PHEMT model, which includes an accurate large‐signal input response and works with variations in the aforementioned input conditions. © 2004 Wiley Periodicals, Inc. Int J RF and Microwave CAE 14, 122–133, 2004.