Generalized nonlinear FET/HEMT modeling | Zendy

Johnson J. | Zendy; Branner G.R. | Zendy; Gudino D. | Zendy; Guan R. | Zendy; Badesha A. | Zendy; Chau W. | Zendy; Shams N. | Zendy; HajOmar A. | Zendy

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Generalized nonlinear FET/HEMT modeling

Author(s) -

Johnson J.,

Branner G.R.,

Gudino D.,

Guan R.,

Badesha A.,

Chau W.,

Shams N.,

HajOmar A.

Publication year - 2004

Publication title -

international journal of rf and microwave computer‐aided engineering

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.335

H-Index - 39

eISSN - 1099-047X

pISSN - 1096-4290

DOI - 10.1002/mmce.10124

Subject(s) - high electron mobility transistor , nonlinear system , electronic engineering , signal (programming language) , microwave , transistor model , transistor , large signal model , power (physics) , computer science , electrical engineering , engineering , physics , telecommunications , voltage , quantum mechanics , programming language

A modeling procedure which provides an accurate large‐signal response for variation in bias, input power level, and fundamental frequency for FET/HEMT transistors is designed. A procedure for measuring the large‐signal input response on an easily implemented system is presented. The technique is illustrated by designing a nonlinear PHEMT model, which includes an accurate large‐signal input response and works with variations in the aforementioned input conditions. © 2004 Wiley Periodicals, Inc. Int J RF and Microwave CAE 14, 122–133, 2004.

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