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Impact of probe‐to‐pad contact degradation on the high frequency characteristics of RF MOSFETs and guidelines to avoid it
Author(s) -
Vandamme E. P.,
Schreurs D.,
van Dinther C.
Publication year - 2001
Publication title -
international journal of rf and microwave computer‐aided engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.335
H-Index - 39
eISSN - 1099-047X
pISSN - 1096-4290
DOI - 10.1002/mmce.1012
Subject(s) - degradation (telecommunications) , materials science , reliability (semiconductor) , mosfet , radio frequency , optoelectronics , contact resistance , microwave , silicon , electrical engineering , electronic engineering , engineering physics , engineering , composite material , transistor , physics , telecommunications , voltage , power (physics) , quantum mechanics , layer (electronics)
Apparent degradation of the RF characteristics of silicon MOSFETs was observed under normal operating conditions. We show that it was not caused by intrinsic device degradation but originated from a degradation of the contact resistance between probe and bonding pad. Guidelines, not limited to MOSFETs only, are given that enable accurate S ‐parameter measurements for RF modelling and reliability assessment. © 2001 John Wiley & Sons, Inc. Int J RF and Microwave CAE 11: 114–120, 2001.