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An empirical HBT large‐signal model for CAD
Author(s) -
Angelov I.,
Choumei K.,
Inoue A.
Publication year - 2003
Publication title -
international journal of rf and microwave computer‐aided engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.335
H-Index - 39
eISSN - 1099-047X
pISSN - 1096-4290
DOI - 10.1002/mmce.10110
Subject(s) - heterojunction bipolar transistor , cad , bipolar junction transistor , large signal model , microwave , signal (programming language) , electronic engineering , small signal model , power (physics) , transistor model , transistor , computer science , materials science , optoelectronics , electrical engineering , physics , engineering , telecommunications , voltage , engineering drawing , programming language , quantum mechanics
A new, simple heterojunction bipolar transistor (HBT) large‐signal model for use in CAD is proposed and experimentally evaluated. The important development in this model is that the main model parameters are derived directly from the measurements taken during typical operating conditions. The model was evaluated with extensive measurements at different temperatures by DC, S , and power‐spectrum measurements. Good correspondence was obtained between the measurement and experimental results. © 2003 Wiley Periodicals, Inc. Int J RF and Microwave CAE 13, 518–533, 2003.