Premium
Modeling power and intermodulation behavior of microwave transistors with unified small‐signal/large‐signal neural network models
Author(s) -
Giannini F.,
Leuzzi G.,
Orengo G.,
Colantonio P.
Publication year - 2003
Publication title -
international journal of rf and microwave computer‐aided engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.335
H-Index - 39
eISSN - 1099-047X
pISSN - 1096-4290
DOI - 10.1002/mmce.10091
Subject(s) - intermodulation , modular neural network , mesfet , artificial neural network , nonlinear system , electronic engineering , signal (programming language) , microwave , multilayer perceptron , computer science , large signal model , nonlinear distortion , modular design , harmonic balance , power (physics) , distortion (music) , engineering , voltage , transistor , electrical engineering , telecommunications , physics , artificial intelligence , time delay neural network , amplifier , field effect transistor , programming language , cmos , quantum mechanics , operating system
This article presents a detailed procedure to learn a nonlinear model and its derivatives to as many orders as desired with multilayer perceptron (MLP) neural networks. A modular neural network modeling a nonlinear function and its derivatives is introduced. The method has been used for the extraction of the large‐signal model of a power MESFET device, modeling the nonlinear relationship of drain‐source current I ds as well as gate and drain charge Q g and Q d with respect to intrinsic voltages V gs and V ds over the whole operational bias region. The neural models have been implemented into a user‐defined nonlinear model of a commercial microwave simulator to predict output power performance as well as intermodulation distortion. The accuracy of the device model is verified by harmonic load‐pull measurements. This neural network approach has demonstrated to predict nonlinear behavior with enough accuracy even if based only on first‐order derivative information. © 2003 Wiley Periodicals, Inc. Int J RF and Microwave CAE 13: 276–284, 2003.