Premium
10W CW broadband balanced limiter/LNA fabricated using MSAG MESFET process
Author(s) -
Bahl Inder J.
Publication year - 2003
Publication title -
international journal of rf and microwave computer‐aided engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.335
H-Index - 39
eISSN - 1099-047X
pISSN - 1096-4290
DOI - 10.1002/mmce.10069
Subject(s) - mesfet , limiter , monolithic microwave integrated circuit , materials science , schottky diode , microwave , electronic circuit , return loss , electrical engineering , optoelectronics , broadband , diode , electronic engineering , transistor , engineering , telecommunications , voltage , field effect transistor , antenna (radio) , amplifier , cmos
This article presents the design and test data for a 10W broadband balanced limiter/LNA MMIC fabricated using MSAG MESFET process. The limiter is based on Schottky diodes and the two‐stage LNA is designed using high‐performance MESFETs. The typical measured performance for the limiter/LNA circuit includes gain greater than 14 dB, NF less than 2.7 dB, and return loss better than 20 dB over the 8.5–11.5 GHz frequency range. The CW power handling for the packaged limiter/LNA circuits was greater than 10W. The packaged devices were also exposed to power levels greater than 10W, and no catastrophic failures were observed up to 18W. © 2003 Wiley Periodicals, Inc. Int J RF and Microwave CAE 13: 118–127, 2003.