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Bias‐dependent small‐signal modeling of GaAs PIN diodes
Author(s) -
Fejzuli Alen,
Dunleavy Lawrence,
Snider Arthur,
Allen Don
Publication year - 2001
Publication title -
international journal of rf and microwave computer‐aided engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.335
H-Index - 39
eISSN - 1099-047X
pISSN - 1096-4290
DOI - 10.1002/mmce.1005
Subject(s) - limiter , biasing , signal (programming language) , microwave , electronic circuit , diode , pin diode , equivalent circuit , large signal model , dc bias , range (aeronautics) , step recovery diode , electronic engineering , materials science , optoelectronics , physics , electrical engineering , engineering , computer science , telecommunications , schottky diode , voltage , power (physics) , quantum mechanics , composite material , programming language
A new bias‐dependent small‐signal GaAs PIN diode model is described that is suitable for use in design of circuits like variable attenuators and limiters. The equivalent circuit parameters are extracted from bias‐dependent S ‐parameters measured from 1 to 26 GHz for 35 bias currents. Bias‐dependent equations are then curve fitted, and then incorporated into a commercially available computer‐aided design (CAD) simulator. Measured and modeled data track each other very well over a range of bias conditions. © 2001 John Wiley & Sons, Inc. Int J RF and Microwave CAE 11: 99–106, 2001.