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Small signal modeling of GaAs PIN diodes aided by electromagnetic analysis
Author(s) -
Shuts Bill,
Dunleavy Lawrence,
Fejzuli Alen,
Allen Don
Publication year - 2001
Publication title -
international journal of rf and microwave computer‐aided engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.335
H-Index - 39
eISSN - 1099-047X
pISSN - 1096-4290
DOI - 10.1002/mmce.1001
Subject(s) - microwave , equivalent circuit , diode , pin diode , signal (programming language) , topology (electrical circuits) , small signal model , electronic engineering , ranging , physics , radio frequency , optoelectronics , gallium arsenide , electrical engineering , computer science , materials science , engineering , telecommunications , voltage , programming language
Abstract A systematic procedure is described for determination of GaAs PIN diode equivalent circuit models from measured S ‐parameter data combined with an electromagnetic analysis of the feed structure. A new parasitic and intrinsic model topology is proposed, and found to be better suited than prior models for the particular GaAs PIN structures considered in this work. Models were developed for forward bias currents ranging from 0.01 to 100 mA, and example measured and modeled results are included to validate the approach. © 2001 John Wiley & Sons, Inc. Int J RF and Microwave CAE 11: 61–68, 2001.