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Efficient method for heterojunction bipolar transistor model parameter extraction based on correlation between extrinsic and intrinsic elements
Author(s) -
Ooi B. L.,
Zhou T. S.,
Kooi P. S.
Publication year - 2002
Publication title -
international journal of rf and microwave computer‐aided engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.335
H-Index - 39
eISSN - 1099-047X
pISSN - 1096-4290
DOI - 10.1002/mmce.10001
Subject(s) - heterojunction bipolar transistor , heterojunction , bipolar junction transistor , small signal model , transistor , reduction (mathematics) , microwave , transistor model , heterostructure emitter bipolar transistor , electronic engineering , computer science , biological system , materials science , computational physics , optoelectronics , mathematics , electrical engineering , physics , engineering , telecommunications , voltage , biology , geometry
Abstract A simple and efficient way of extracting the small‐signal model parameters of the heterojunction bipolar transistor (HBT) is proposed. This novel approach provides a new insight into the strong correlation between the extrinsic and intrinsic HBT model parameters and raises the optimization efficiency by drastically reducing the search space. For the first time in HBT modeling, an explicit equation on the total extrinsic elements is derived, which results in a reduction of the number of optimization variables. The simulation results are presented and it is shown that this new method can yield a good fit between measured and simulated S parameters. © 2002 Wiley Periodicals, Inc. Int J RF and Microwave CAE 12: 311–319, 2002. Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mmce.10001