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The transient behaviour of multidimensional PN‐diodes in low injection
Author(s) -
Schmeiser Christian,
Unterreiter Andreas
Publication year - 1993
Publication title -
mathematical methods in the applied sciences
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.719
H-Index - 65
eISSN - 1099-1476
pISSN - 0170-4214
DOI - 10.1002/mma.1670160403
Subject(s) - mathematics , transient (computer programming) , biasing , diode , boundary value problem , current (fluid) , integral equation , mathematical analysis , simple (philosophy) , voltage , volterra integral equation , physics , quantum mechanics , thermodynamics , computer science , operating system , philosophy , epistemology
Abstract An initial boundary value problem modelling the transient behaviour of a pn‐junction semiconductor diode is simplified by formal asymptotics, where the scaled minimal Debye length and the scaled intrinsic number are considered as small parameters. The implicit assumption on the biasing situation is that of low injection. The simplified model is shown to be equivalent to an integral relation between the evolution of the current and of the contact voltage. A simple switching application is governed by a non‐linear Volterra integral equation for the current. This equation is shown to possess a unique solution globally in time converging to the unique steady state.