Charge transport in semiconductors with degeneracy effects | Zendy

Poupaud Frédéric | Zendy; Schmeiser Christian | Zendy

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Charge transport in semiconductors with degeneracy effects

Author(s) -

Poupaud Frédéric,

Schmeiser Christian

Publication year - 1991

Publication title -

mathematical methods in the applied sciences

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.719

H-Index - 65

eISSN - 1099-1476

pISSN - 0170-4214

DOI - 10.1002/mma.1670140503

Subject(s) - boltzmann equation , uniqueness , degeneracy (biology) , degenerate energy levels , mathematics , boundary value problem , charge (physics) , boltzmann constant , perturbation (astronomy) , fermi–dirac statistics , work (physics) , partial differential equation , statistical physics , mathematical physics , mathematical analysis , physics , quantum mechanics , bioinformatics , biology , electron

It has been a common procedure to derive a model for charge transport in degenerate semiconductor material by incorporating a Fermi–Dirac distribution into the classical drift–diffusion model. In this work a Boltzmann equation with a non‐linear collision term is considered. A new fluid dynamical model is derived by considering small perturbations of the thermal equilibrium. The analysis contains an existence and uniqueness proof for the Boltzmann equation, a justification of the perturbation argument and a study of initial boundary value problems for the new fluid dynamical model.

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