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Relaxation‐time limit of the three‐dimensional hydrodynamic model with boundary effects
Author(s) -
Li Yeping
Publication year - 2011
Publication title -
mathematical methods in the applied sciences
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.719
H-Index - 65
eISSN - 1099-1476
pISSN - 0170-4214
DOI - 10.1002/mma.1433
Subject(s) - mathematics , boundary value problem , limit (mathematics) , semiconductor , statistical physics , diffusion , bounded function , slip (aerodynamics) , domain (mathematical analysis) , semiconductor device , relaxation (psychology) , boundary (topology) , mathematical analysis , mechanics , physics , thermodynamics , materials science , psychology , social psychology , layer (electronics) , quantum mechanics , composite material
In this paper, we study three‐dimensional (3D) unipolar and bipolar hydrodynamic models and corresponding drift‐diffusion models from semiconductor devices on bounded domain. Based on the asymptotic behavior of the solutions to the initial boundary value problems with slip boundary condition, we investigate the relation between the 3D hydrodynamic semiconductor models and the corresponding drift‐diffusion models. That is, we discuss the relation‐time limit from the 3D hydrodynamic semiconductor models to the corresponding drift‐diffusion models by comparing the large‐time behavior of these two models. These results can be showed by energy arguments. Copyrightcopyright 2011 John Wiley & Sons, Ltd.