Open AccessMicrostructure investigation of damage recovery in SiC by swift heavy ion irradiation
Author(s) -
Wang Xu,
Li Junhan,
Wang Jie,
Song Jie,
Zhao Fuqiang,
Tang Hexi,
Li Bingsheng,
Xiong AnLi
Publication year - 2019
Publication title -
material design & processing communications
Language(s) - English
Resource type - Journals
ISSN - 2577-6576
DOI - 10.1002/mdp2.87
Subject(s) - swift heavy ion , swift , microstructure , irradiation , materials science , ion , nuclear engineering , composite material , nuclear physics , chemistry , physics , engineering , astrophysics , fluence , organic chemistry
Radiation‐induced defect annealing in He or Fe‐implanted 6H‐SiC by means of Fe‐ion irradiation is investigated by cross‐sectional transmission electron microscopy (XTEM). The lattice defects are formed by He implantation at 450°C, and amorphization is formed by Fe implantation at room temperature (RT). Postimplantation, the specimens are irradiated by 6.7‐MeV/u Fe 17+ ions at RT. We investigate the evolution of the lattice defects using XTEM before and after Fe 17+ ‐ion irradiation. It shows that Fe 17+ ‐ion irradiation induces the recovery of pre‐exiting lattice defect and epitaxial recrystallization of the amorphous layer. The detailed reason for Fe 17+ ‐ion irradiation‐induced defect annealing in SiC is discussed.