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Der Einfluss von adsorbierten magnetischen und nicht‐magnetischen Atomen auf den elektronischen Transport in Oberflächen mit starker Spin‐Bahn Kopplung
Author(s) -
Lükermann D.,
Sologub S.,
Pfnür H.,
Klein C.,
HornvonHoegen M.,
Tegenkamp C.
Publication year - 2013
Publication title -
materialwissenschaft und werkstofftechnik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.285
H-Index - 38
eISSN - 1521-4052
pISSN - 0933-5137
DOI - 10.1002/mawe.201300114
Subject(s) - condensed matter physics , coupling (piping) , scattering , weak localization , surface states , adsorption , spin (aerodynamics) , fermi level , spin–orbit interaction , chemistry , atom (system on chip) , electron , materials science , magnetoresistance , surface (topology) , physics , magnetic field , geometry , mathematics , organic chemistry , quantum mechanics , computer science , optics , metallurgy , thermodynamics , embedded system
Adsorption‐induced reduction of the surface state conductivity in epitaxial Bi(111) films, a prototype system with a large Rashba‐induced surface state splitting by adsorbed atoms of Bi, Fe and Co was investigated by macroscopic surface magneto‐transport measurements at a temperature of 10 K. A detailed analysis of magneto‐transport, DC‐transport and Hall data reveals that the scattering efficiencies for Co and Fe are by a factor of two larger than for Bi. While for the latter, charge transfer and change of band filling near the Fermi level is negligible, we found an increase of hole concentration upon Co and Fe adsorption. These atoms act as acceptors and retract roughly 0.5 electrons from the surface per adsorbed atom. Besides the dominant classical magneto‐conductance signal the films show signatures of weak anti‐localization (WAL) reflecting the strong spin‐orbit coupling in Bi(111) surface states. Our measurements show that the control of hybridization is important in order to make use of local spin‐moments and to increase the backscattering rate in strongly spin‐orbit coupled systems, e. g., topological insulators.