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Der Einfluss von Verunreinigungen auf die vibratorische und elektronische Struktur von Graphen
Author(s) -
Sagalianov I.Y.,
Prylutskyy Y.I.,
Tatarenko V.A.,
Radchenko T.M.,
Sudakov O.O.,
Ritter U.,
Scharff P.,
Le Normand F.
Publication year - 2013
Publication title -
materialwissenschaft und werkstofftechnik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.285
H-Index - 38
eISSN - 1521-4052
pISSN - 0933-5137
DOI - 10.1002/mawe.201300086
Subject(s) - graphene , dopant , raman spectroscopy , conductance , impurity , ab initio , doping , raman scattering , materials science , electron , boron , scattering , ab initio quantum chemistry methods , molecular physics , condensed matter physics , chemistry , atomic physics , nanotechnology , optoelectronics , molecule , physics , optics , quantum mechanics , organic chemistry
Using the ab initio methods, boron or nitrogen doping effects on the characteristics of electron and vibrational spectrums of graphene are studied. We revealed that a mutual arrangement at the largest distance from each other is energy‐preferred for these dopant atoms. Depending on their kind, one can regulate conductance and raise values of fundamental frequencies of the Raman scattering in graphene.