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Synthese von SiC Nanostrukturen mittels chemischen Aufdampfens
Author(s) -
Chiew Y. L.,
Cheong K. Y.
Publication year - 2012
Publication title -
materialwissenschaft und werkstofftechnik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.285
H-Index - 38
eISSN - 1521-4052
pISSN - 0933-5137
DOI - 10.1002/mawe.201200974
Subject(s) - nanorod , wafer , materials science , chemical vapor deposition , silicon , graphite , agglomerate , chemical engineering , nanotechnology , silicon carbide , composite material , optoelectronics , engineering
In this study, SiC nanorods and nanocolumns were synthesized using a catalyst‐free method with activated carbon powder and oxidized silicon wafer (oxidation time of the wafer varied from 1 to 12 min to produce different SiO 2 thickness) as source materials. SiC nanorods were mostly found at the center of silicon wafer that was exposed to activated carbon powder while SiC nanocolumns were mostly found at the side of the wafer where it was in direct contact with graphite crucible. When thicker SiO 2 was used, SiC nanorods at the center tended to agglomerate together into particles. SiC nanocolumns at the side of the wafer were also increased in amount as the oxidation time increased. Growth of SiC nanorods and nanocolumns could be attributed to chemical vapor growth via vapor‐solid mechanism.