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Deposition Temperature Effect on the Structure and Optical Property of RF‐PACVD‐Derived Hydrogenated SiCNO Film
Author(s) -
Zhou Y.,
Yan X.,
Kroke E.,
Riedel R.,
Probst D.,
Thissen A.,
Hauser R.,
Ahles M.,
von Seggern H.
Publication year - 2006
Publication title -
materialwissenschaft und werkstofftechnik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.285
H-Index - 38
eISSN - 1521-4052
pISSN - 0933-5137
DOI - 10.1002/mawe.200600993
Subject(s) - deposition (geology) , materials science , chemical vapor deposition , amorphous solid , surface roughness , analytical chemistry (journal) , plasma enhanced chemical vapor deposition , chemical engineering , silicon , combustion chemical vapor deposition , ellipsometry , thin film , carbon film , chemistry , composite material , nanotechnology , crystallography , metallurgy , organic chemistry , paleontology , sediment , engineering , biology
Abstract Amorphous hydrogenated silicon oxocarbonitride (SiCNO:H) films have been deposited by plasma‐assisted chemical vapour deposition (PACVD) using bis(trimethylsilyl)carbodiimide (BTSC) as a single source precursor in a argon (Ar) radio‐frequency plasma. In this work the SiCNO:H films deposited at different deposition temperatures were studied in terms of deposition rate, refractive index, surface roughness, microstructure, and chemical composition including bonding state. The results showed that a higher deposition temperature enhanced the formation of Si‐N bonds, and disfavoured the formation of N=C=N, Si‐NCN, C‐H and Si‐CH 3 bonds. A higher deposition temperature also decreased the deposition rate and increased the refractive index of the resulting SiCNO:H film. With increasing temperature a denser film was formed, indicating a change of the deposition mechanism, i.e., transformation from particle precipitation to heterogeneous surface reaction. Except for the coatings deposited at room temperature, the surface of the films was smooth with a roughness of around 4 nm at the centre in the range of 5 μm x 5 μm area. Moreover, the films contained 8 ∼ 16 at.% oxygen bonded to Si, which originated from the remnant H 2 O in the deposition chamber.