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Tuning of electrical properties of In x O y thin films grown by MOCVD for different applications
Author(s) -
Wang Ch. Y.,
Cimalla V.,
Ambacher O.
Publication year - 2006
Publication title -
materialwissenschaft und werkstofftechnik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.285
H-Index - 38
eISSN - 1521-4052
pISSN - 0933-5137
DOI - 10.1002/mawe.200600079
Subject(s) - metalorganic vapour phase epitaxy , chemical vapor deposition , indium , materials science , crystallite , thin film , oxide , metal , nanotechnology , chemical engineering , analytical chemistry (journal) , chemistry , optoelectronics , metallurgy , organic chemistry , epitaxy , layer (electronics) , engineering
Tuning of electrical properties of indium oxide (In 2 O 3 ) films by means of metal organic chemical vapor deposition (MOCVD) is demonstrated. Body‐centered cubic In 2 O 3 polycrystalline thin films on Al 2 O 3 (0001) substrates were obtained. The specific resistance of the as‐grown films can be tuned by about two orders of magnitude by varying the growth conditions.