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Diffusion‐Induced Doping Processes and Defect Kinetics in Power Devices
Author(s) -
Schulze H.J.,
Niedernostheide F.J.,
Bauer K.,
Weidner P.
Publication year - 2005
Publication title -
materialwissenschaft und werkstofftechnik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.285
H-Index - 38
eISSN - 1521-4052
pISSN - 0933-5137
DOI - 10.1002/mawe.200500907
Subject(s) - annealing (glass) , materials science , doping , diffusion , fabrication , getter , optoelectronics , physics , metallurgy , thermodynamics , medicine , alternative medicine , pathology
The fabrication of high‐power devices requires the creation of deep p‐n junctions–typically deeper than 100 μm–, uniform and localized carrier lifetime control, and efficient gettering processes. It is shown how these processes and their interactions influence the device characteristics, and how the processes can be optimized for high‐power device technology. Concerning the creation of deep p ‐type and n ‐type layers the focus is on deep diffusion processes of aluminum that can be used to generate even laterally structured deep p‐type layers, and proton implantation with a subsequent annealing step that provides a proper means to create deep n‐type layers.