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Characterization of Indium‐Tin‐Oxide Thin Film Microelectrodes for Biomedical Use
Author(s) -
Jakubec A.,
Tvarozek V.,
Novotny I.,
Rehacek V.,
Breternitz V.,
Knedlik Ch.,
Spiess L.
Publication year - 2003
Publication title -
materialwissenschaft und werkstofftechnik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.285
H-Index - 38
eISSN - 1521-4052
pISSN - 0933-5137
DOI - 10.1002/mawe.200390132
Subject(s) - indium tin oxide , materials science , electrical resistivity and conductivity , indium , sputtering , transmittance , characterization (materials science) , thin film , optoelectronics , oxide , tin , diode , electrical resistance and conductance , sheet resistance , nanotechnology , metallurgy , composite material , layer (electronics) , electrical engineering , engineering
Selected properties of indium‐tin‐oxide (ITO) films prepared by r.f. diode sputtering have been investigated in consideration of surface morphology, optical properties, crystal structure and phase formation, electrical resistivity and chemical resistance. The ITO films showed low electrical resistivity (6·10 ‐5 Ωm), high optical transmittance (> 80 %) and suitable chemical resistance against selected chemicals during 1 hour.