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Microstructural effects on properties and new processing techniques of silicon nitride . Part I: Microstructural effects on mechanical, thermal and thermomechanical Properties of Silicon Nitride
Author(s) -
Ziegler G.
Publication year - 1983
Publication title -
materialwissenschaft und werkstofftechnik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.285
H-Index - 38
eISSN - 1521-4052
pISSN - 0933-5137
DOI - 10.1002/mawe.19830140507
Subject(s) - silicon nitride , materials science , sintering , nitride , hot isostatic pressing , thermal shock , silicon , microstructure , hot pressing , composite material , metallurgy , layer (electronics)
Based on the correlation of some essential microstructural parameters and various mechanical, thermal and thermo‐mechanical properties of hot‐pressed and reaction‐bonded silicon nitride, the demand for further improving the properties of silicon nitride and for developing a more economical fabrication of silicon nitride by applying new processing techniques is indicated. Aspects and problem areas of various new techniques, such as sintering of Si 3 N 4 ‐powder compacts and post‐sintering of reaction‐bonded silicon nitride as well as the various routes of hot‐isostatic pressing, are discussed. The paper is divided into two parts: Part I: Microstructural effects on mechanical, thermal and thermomechanical properties of silicon nitride. Part II: New processing techniques of silicon nitride. In part I the relationship between microstructure and various mechanical, thermal and thermo‐mechanical properties of hot‐pressed and reaction‐bonded silicon nitride, such as fracture strength, thermal diffusivity and thermal shock resistance, is discussed. On the basis of this correlation today's limits of silicon nitride regarding a broader application, and the possibilities for optimizing this material group are outlined. This discussion demonstrates the necessity of further improving some important properties and of developing new processing techniques. In part II the development lines of these new techniques for silicon nitride processing are discussed and a survey is given of recent progresses in the use of those techniques. As an example of a new processing technique, results of hot‐isostatic pressing of reaction‐bonded silicon nitride are presented in more detail.