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A Study on Annealing Process Influenced Electrical Properties of Ni/CeO 2 /p‐Si/Al Schottky Barrier Diodes
Author(s) -
Nallabala Nanda Kumar Reddy,
Kummara Venkata Krishnaiah,
Chinnappa Yuvaraj,
George P. P.,
Manjunath V.,
Sanniboina Jagadeesh,
Reddy S. Manikanteswara,
Gangasani Nethaji Reddy
Publication year - 2021
Publication title -
macromolecular symposia
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.257
H-Index - 76
eISSN - 1521-3900
pISSN - 1022-1360
DOI - 10.1002/masy.202000228
Subject(s) - materials science , thermionic emission , annealing (glass) , schottky barrier , schottky diode , equivalent series resistance , diode , oxide , analytical chemistry (journal) , semiconductor , optoelectronics , metallurgy , electron , chemistry , electrical engineering , physics , chromatography , quantum mechanics , voltage , engineering
The impact of annealing process on I‐V characteristics of Ni/CeO 2 /p‐Si/Al metal‐insulator‐semiconductor (MIS) type Schottky barrier diodes is investigated. The I‐V measurements are performed for the as‐deposited and 700 °C annealed samples at room temperature. The Schottky barrier height (SBH), ideality factor values are evaluated using thermionic emission theory and are found to be 0.67 eV, 1.21 for the as‐deposited sample and 0.72 eV, 1.01 for the 700 °C annealed sample. The calculations indicate that the 700 °C annealed sample for 45 min exhibits a lower series resistance (680 Ω) when compared to the as‐deposited sample (2206 Ω). The calculated shunt resistance for the 700 °C annealed sample is found to be 346 × 10 3 Ω which is found to be lower than that of the as‐deposited sample that is 962 × 10 3 Ω. In conclusion, it is elucidated that the intentionally deposited CeO 2 (rare‐earth oxide) insulating layer at the interface of Ni/p‐Si and the subsequent annealing process significantly influence the electrical properties of the fabricated Ni/CeO 2 /p‐Si/Al MIS type Schottky barrier diodes.