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Electronic and Optical Properties of GaAs Bilayer
Author(s) -
Bahuguna Bhagwati P.,
Saini L. K.,
Sharma Rajesh O.
Publication year - 2017
Publication title -
macromolecular symposia
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.257
H-Index - 76
eISSN - 1521-3900
pISSN - 1022-1360
DOI - 10.1002/masy.201600208
Subject(s) - bilayer , refractive index , materials science , density functional theory , monolayer , molar absorptivity , condensed matter physics , band gap , optoelectronics , optics , chemistry , physics , nanotechnology , computational chemistry , membrane , biochemistry
In the present work, we have systematically studied structural, electronic and optical properties of buckled GaAs bilayer with and without spin‐orbit coupling by density functional theory. Buckled GaAs bilayer have direct band gap of 0.70 eV at high symmetric Г‐point which is low as compare to GaAs monolayer. Optical properties such as real and imaginary part of dielectric functions, refractive index, extinction coefficient, absorption spectrum and reflectivity are well studied using density function theory. The calculated optical properties show that the buckled GaAs bilayer can be beneficial for optoelectronic and light emitting devices.