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Novel Approach for Invention of Nubbly‐Like Cd(SSe) Thin Film: Photoelectrochemical Application
Author(s) -
Khot Kishorkumar V.,
Mali Sawanta S.,
Patil Pallavi B.,
Kharade Rohini R.,
Mane Rahul M.,
Hong Chang Kook,
Bhosale Popatrao N.
Publication year - 2016
Publication title -
macromolecular symposia
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.257
H-Index - 76
eISSN - 1521-3900
pISSN - 1022-1360
DOI - 10.1002/masy.201400224
Subject(s) - thin film , crystallite , materials science , nanocrystalline material , band gap , analytical chemistry (journal) , scanning electron microscope , substrate (aquarium) , field emission microscopy , spectroscopy , field electron emission , diffraction , optics , nanotechnology , optoelectronics , chemistry , composite material , electron , oceanography , physics , chromatography , quantum mechanics , geology , metallurgy
Summary Self‐organized arrested precipitation technique (APT) has been successfully used for synthesis of nubbly‐like cadmium sulfoselenide (Cd(SSe)) thin film. Deposited Cd(SSe) thin films was characterized by using UV–Vis spectrophotometer, X‐ray diffraction (XRD) study, field emission scanning electron microscopy (FESEM), energy dispersive X‐ray spectroscopy (EDS) techniques. Surface profiler study revealed that thickness of deposited thin film is 793 nm. Optical absorption study indicated that, direct allowed type of transition with 1.86 eV optical band gap energy. XRD study confirmed that, deposited thin film is nanocrystalline in nature with pure hexagonal crystal structure and calculated crystallite size is 68 nm. Well‐adherent and crack free deposition on substrate surface was observed in low resolution FESEM image. High resolution FESEM image shows formation of nubbly‐like surface morphology from bunch of smaller nanospheres. EDS pattern confirms that deposited thin film is stoichiomtric in nature. Highest short circuit current density ( J sc ) of 0.454 mA/cm 2 and corresponding value of open circuit voltage ( V oc ) was 782 mV. From J–V measurement, photoconversion efficiency of 0.57% was achieved.