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Dual Gate Tunable and High Responsivity Graphene‐Based Field Effect Transistors
Author(s) -
Soni Mahesh,
Sharma Satinder Kumar,
Soni Ajay
Publication year - 2015
Publication title -
macromolecular symposia
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.257
H-Index - 76
eISSN - 1521-3900
pISSN - 1022-1360
DOI - 10.1002/masy.201400176
Subject(s) - graphene , transistor , materials science , field effect transistor , optoelectronics , responsivity , saturation (graph theory) , voltage , electron mobility , electrical engineering , nanotechnology , photodetector , engineering , mathematics , combinatorics
Summary The output characteristics of a dual gated depletion mode, n‐ channel graphene field effect transistor ( n ‐Gr‐FET) are simulated to understand the unipolar I ds – V ds behavior for different values of gate voltages, ( V back and V top ). In our results, the saturated drain‐source current ( I ds ) varies from 0.001 to 100 µA/µm, 9 to 125 µA/µm and 16 to 135 µA/µm as V back is varied from 5 to 40 V with correspondingly V top of 0, 2 and 10 volts. Consequently, there is four to eight times enhancement in estimated mobility for varying V back from 5 to 40V. The unipolar saturation in I ds at higher values of V ds can be understood from the compensation of parallel V ds and transverse ( V back − V top ) electric fields. Furthermore, the channel length modulation (increase in I ds for V top > 0) supported by the increase in mobility, is observed because of reverse junction formation at the vicinity of the drain and gate terminal. The results signify that the dual gated n‐ Gr‐FET, at optimum V back , modulates the unipolar characteristics in channel region. Thus, making n‐ Gr‐FET a potential candidate to stipulate the demand of low power, high performance functionalities in nano‐electronic applications.