High‐K and Low Loss Bi 1.5 Zn 1.0 Nb 1.5 O 7 /Polyimide Composite Films for Application in Embedded Capacitors | Zendy

Choi SeungHoon | Zendy; Kim IlDoo | Zendy; Hong JaeMin | Zendy; Oh SeongGuen | Zendy

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High‐K and Low Loss Bi 1.5 Zn 1.0 Nb 1.5 O 7 /Polyimide Composite Films for Application in Embedded Capacitors

Author(s) -

Choi SeungHoon,

Kim IlDoo,

Hong JaeMin,

Oh SeongGuen

Publication year - 2007

Publication title -

macromolecular symposia

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.257

H-Index - 76

eISSN - 1521-3900

pISSN - 1022-1360

DOI - 10.1002/masy.200750339

Subject(s) - polyimide , materials science , dielectric , composite number , capacitor , composite material , dielectric loss , ceramic , isopropyl , dispersion (optics) , ceramic capacitor , permittivity , layer (electronics) , optoelectronics , organic chemistry , electrical engineering , chemistry , voltage , engineering , physics , optics

We report on the role of Bi 1.5 Zn 1.0 Nb 1.5 O 7 (BZN) ceramic fillers in notably reducing the dielectric loss of BZN/polyimide composite films manufactured for application in flexible RF embedded capacitors. The composite films were synthesized using a colloidal process. INAAT (isopropyl tris(N‐amino‐ethyl aminoethyl)titanate) was used as a coupling agent for homogeneous dispersion of BZN particles into a polyimide matrix. The BZN/polyimide composite films (BZN content at 50 Vol%) exhibited a low dielectric loss of 0.0369 at 12 MHz while retaining a high dielectric constant of 14.75.

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