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High‐K and Low Loss Bi 1.5 Zn 1.0 Nb 1.5 O 7 /Polyimide Composite Films for Application in Embedded Capacitors
Author(s) -
Choi SeungHoon,
Kim IlDoo,
Hong JaeMin,
Oh SeongGuen
Publication year - 2007
Publication title -
macromolecular symposia
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.257
H-Index - 76
eISSN - 1521-3900
pISSN - 1022-1360
DOI - 10.1002/masy.200750339
Subject(s) - polyimide , materials science , dielectric , composite number , capacitor , composite material , dielectric loss , ceramic , isopropyl , dispersion (optics) , ceramic capacitor , permittivity , layer (electronics) , optoelectronics , organic chemistry , electrical engineering , chemistry , voltage , engineering , physics , optics
We report on the role of Bi 1.5 Zn 1.0 Nb 1.5 O 7 (BZN) ceramic fillers in notably reducing the dielectric loss of BZN/polyimide composite films manufactured for application in flexible RF embedded capacitors. The composite films were synthesized using a colloidal process. INAAT (isopropyl tris(N‐amino‐ethyl aminoethyl)titanate) was used as a coupling agent for homogeneous dispersion of BZN particles into a polyimide matrix. The BZN/polyimide composite films (BZN content at 50 Vol%) exhibited a low dielectric loss of 0.0369 at 12 MHz while retaining a high dielectric constant of 14.75.