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PANI‐CSA: An Easy Method to Avoid ITO Photolithography in PLED Manufacturing
Author(s) -
Vacca Paolo,
Maglione Maria Grazia,
Minarini Carla,
Salzillo Giovanna,
Amendola Eugenio,
Della Sala Dario,
Rubino Alfredo
Publication year - 2005
Publication title -
macromolecular symposia
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.257
H-Index - 76
eISSN - 1521-3900
pISSN - 1022-1360
DOI - 10.1002/masy.200551024
Subject(s) - materials science , optoelectronics , layer (electronics) , photolithography , polyaniline , indium tin oxide , polymer , conductive polymer , oled , anode , photoresist , doping , diode , electrode , nanotechnology , polymerization , composite material , chemistry
In order to optimize polymer light emitting diode (PLED) performances, devices with holes injected through an Indium Tin Oxide (ITO) / Polyaniline (PANI) electrode into the polymer are much more efficient than devices fabricated with the anode made only by ITO. We demonstrated that by using doped PANI as hole injection layer in a polymer light emitting diode the manufacturing process can become simpler. Indeed, the pattern of conductive layer can be produced without ITO photolithography by UV exposition. As hole transporter layer, Poly( N ‐vinylcarbazole) (PVK) was spin coated over the doped PANI layer and a layer of tris (8‐hydroxy) quinoline aluminum (Alq 3 ) was then thermally evaporated so as to form the electron transport layer. To complete the device structure, Aluminum contacts were deposited onto the organic layers by vacuum evaporation at low pressure. The layers were characterized by X‐ray small‐angle diffraction, IR Raman and UV‐Vis spectroscopies. Devices without PANI and with PANI as HIL were studied.