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Generation of charge carrier pairs in tetracene layers
Author(s) -
Obarowska Malgorzata,
Signerski Ryszard,
Godlewski Jan
Publication year - 2004
Publication title -
macromolecular symposia
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.257
H-Index - 76
eISSN - 1521-3900
pISSN - 1022-1360
DOI - 10.1002/masy.200450853
Subject(s) - tetracene , charge carrier , charge (physics) , trapping , recombination , materials science , absorption (acoustics) , electron , carrier generation and recombination , carrier lifetime , optoelectronics , chemical physics , molecular physics , atomic physics , chemistry , photochemistry , physics , semiconductor , silicon , anthracene , nuclear physics , ecology , biochemistry , gene , biology , quantum mechanics , composite material
The mechanism of negative and positive charge carrier generation by light absorption in tetracene layers has been studied. We conclude that there are different processes determining electron and hole production. Positive charge carriers are produced without recombination while the negative charge carrier generation depends strongly on the recombination process. The experimental data for charge carrier generation in tetracene layers are treated theoretically taking into account photogeneration, recombination of charge carriers, trapping and transport processes inside the sample.