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Voltage‐induced infrared spectra from polymer field‐effect transistors
Author(s) -
Furukawa Yukio,
Yamamoto Jun,
Cho DonChan,
Mori Tatsuo
Publication year - 2004
Publication title -
macromolecular symposia
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.257
H-Index - 76
eISSN - 1521-3900
pISSN - 1022-1360
DOI - 10.1002/masy.200450102
Subject(s) - materials science , field effect transistor , infrared , optoelectronics , charge carrier , semiconductor , diode , transistor , dielectric , analytical chemistry (journal) , absorption (acoustics) , spectral line , infrared spectroscopy , absorption spectroscopy , organic semiconductor , polymer , voltage , optics , chemistry , electrical engineering , physics , organic chemistry , chromatography , astronomy , composite material , engineering
Charge‐induced infrared absorption spectra from the metal‐insulator‐semiconductor diodes fabricated with aluminum oxide, poly(p‐xylylene), and SiO 2 as gate dielectric and regioregular poly(3‐octylthiophene) as organic semiconductor have been measured in situ with reflection or transmission configurations by the FT‐IR difference‐spectrum method. The observed bands have been attributed to the carriers injected into the polymer layers under the application of minus gate bias. The wavenumber of the band around 1300 cm −1 depends on the gate voltage, indicating that the structure of the carriers depends on the carrier concentration. There exist upper limits in the concentrations of the injected carriers. In situ infrared absorption measurements provide the information about the injected carriers, which affect the properties and the functions of polymer field‐effect devices.