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Approach of the mechanism of poly(3‐octyl thiophene) crosslinking under electron beam
Author(s) -
Froyer Gerard,
Louarn Gu Y.,
Ciprelli Jean Louis,
Clarisse Christian
Publication year - 1997
Publication title -
macromolecular symposia
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.257
H-Index - 76
eISSN - 1521-3900
pISSN - 1022-1360
DOI - 10.1002/masy.19971220155
Subject(s) - allylic rearrangement , thiophene , materials science , polymer , double bond , resist , alkyl , carbon fibers , polymer chemistry , irradiation , photoresist , cathode ray , chemical engineering , photochemistry , electron , nanotechnology , chemistry , organic chemistry , composite material , catalysis , physics , layer (electronics) , quantum mechanics , composite number , nuclear physics , engineering
Poly(3‐octylthiophene) was used as a negative resist in e‐beam microlithography. This conducting polymer fulfills the main requirements placed on materials which can be useful in this type of process. However, chemical modifications leading to crosslinking are not clearly established at this time. Approach of a mechanism is proposed in this paper which is supported by spectroscopic results obtained from the irradiated materials: it seems reasonable that crosslinking might occur between lateral alkyl groups eventually on carbon atoms in allylic position with the formation of a carbon ‐ carbon double bond between locally stacked Poly(3‐octylthiophene) chains.