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Design of aromatic copolyesters for use in microelectronic devices
Author(s) -
Schneggenburger Lizabeth A.,
Economy James E.,
Hong Soon Man
Publication year - 1996
Publication title -
macromolecular symposia
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.257
H-Index - 76
eISSN - 1521-3900
pISSN - 1022-1360
DOI - 10.1002/masy.19961040103
Subject(s) - copolyester , materials science , microelectronics , dielectric , composite material , adhesive , polymer , thermal expansion , high κ dielectric , silicon , melting point , thermal stability , temperature coefficient , chemical engineering , nanotechnology , optoelectronics , polyester , layer (electronics) , engineering
The next generation of microelectronic devices will require design of new kinds of polymers which are tailored to display a dielectric constant as low as 2.0, a coefficient of thermal expansion (CTE) which matches the metal circuitry as well as the silicon substrate, moisture and chemical resistance, and dimensional stability at processing temperatures of 300‐400°C which are required to form an adhesive bond between laminates. In our program, we have made significant progress in all of these areas through the use of liquid crystalline copolyesters (LCP's) laminated with a newly developed crosslinkable copolyester. In this paper, data are presented which illustrate how films and coatings of either system can be made to adhere in the solid state by interchain transesterification reactions (ITR) at the interface. Ability to foam the crosslinkable copolyester films provides direct control over the dielectric constant. The effect of pore size and distribution on the dielectric constant will be discussed. The potential to dramatically increase the melting point of the LCP's through high temperature annealing is also discussed.