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Mechanism of photogeneration of free carriers in quasi‐one‐dimensional photosemiconductors: Application tc polydiacetylene
Author(s) -
Frankevich E. L.,
Sokolik I. A.,
Lymarev A. A.
Publication year - 1990
Publication title -
makromolekulare chemie. macromolecular symposia
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.257
H-Index - 76
eISSN - 1521-3900
pISSN - 0258-0322
DOI - 10.1002/masy.19900370107
Subject(s) - charge carrier , free carrier , yield (engineering) , excitation , condensed matter physics , electric field , trapping , quantum yield , charge (physics) , materials science , field (mathematics) , physics , chemistry , optics , quantum mechanics , ecology , mathematics , pure mathematics , metallurgy , fluorescence , biology
The dependence of the quantum yield of free charge carriers on the electric field strength in quasi‐one‐dimensional photosemiconductors is rationalized. The occurrence of the trapping and nongeminate recombination in the bulk of the material is shown to be responsible of nonzero yield at zero external field. Current i vs. excitation intensity g plot obeys the law i ∼g 2/3 for polydiacetylene single crystal as expected from theory presented.