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Photosensitive resist system composed of phenolic resin and aromatic azide
Author(s) -
ogaki Saburo,
Toriumi Minoru
Publication year - 1990
Publication title -
makromolekulare chemie. macromolecular symposia
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.257
H-Index - 76
eISSN - 1521-3900
pISSN - 0258-0322
DOI - 10.1002/masy.19900330120
Subject(s) - azide , photosensitivity , resist , phenol , photochemistry , lithography , chemistry , photoresist , phenols , photochromism , polymer chemistry , materials science , organic chemistry , optoelectronics , layer (electronics)
Phenolic resins such as cresol novolac and poly‐( p ‐hydroxystyrene) are photosensitized by the addition of an aromatic azide to give negative‐working photoresists. The spectral sensitivity can be varied from deep UV to visible region by changing the kind of azide. The system composed of poly( p ‐hydroxystyrene) and a phenol ester of p ‐azidobenzenesulfonic acid is expected to be useful in deep UV fine‐line lithography. The system containing 23 wt% of p ‐ n ‐pentylphenol p ‐azidobenzenesulfonate exhibits a photosensitivity about 50 mJ/cm 2 at the wavelength of 248 nm.