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Substituent positional variations and the lithographic properties of poly(methylstyrene‐CO‐chloromethylstyrene) resist systems
Author(s) -
Griffiths Llŷr G.,
Jones Richard G.,
Brambley David R.,
Tate Philip Miller
Publication year - 1989
Publication title -
makromolekulare chemie. macromolecular symposia
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.257
H-Index - 76
eISSN - 1521-3900
pISSN - 0258-0322
DOI - 10.1002/masy.19890240120
Subject(s) - copolymer , resist , lithography , substituent , materials science , polymer , polymer chemistry , organic chemistry , chemistry , nanotechnology , composite material , optoelectronics , layer (electronics)
The lithographic performances of structurally different copolymers of methylstyrene (ortho‐, meta‐ and para‐isomers) and chloromethylstyrene (meta‐ and para‐isomers) have been assessed. Linear correlations of the data, based on Charlesby's theory of radiation‐induced crosslinking of polymers, demonstrate that sensitivity and contrast are functionally related for this system. Variation of the structure of the chloromethylstyrene component of the copolymers had little effect on the lithographic parameters, but the effect of structural variation of the methylstyrene component was pronounced, the order of increasing sensitivity being ortho < meta < para.